VND670SP_08 Просмотр технического описания (PDF) - STMicroelectronics

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VND670SP_08

Dual high-side switch with dual Power MOSFET gate driver (bridge configuration)

STMicroelectronics 

Electrical specifications

VND670SP

Table 7. Protection and diagnostic

Symbol

Parameter

Test conditions

VUSD

VOV

ILIM

TTSD

Vocl

Vsat

Undervoltage shutdown

Overvoltage shutdown

Current limitation

Thermal shutdown

temperature

Output turn-off clamp

voltage

External MOSFET

saturation voltage

detection threshold

VIN = 3.25 V

ILOAD = 12A, L = 6mH

Min. Typ. Max. Unit

5.5 V

36 43

V

30 45

A

150 170 200 °C

VCC-

55

VCC-

41

V

2.5 4.2 5.5 V

Table 8. PWM

Symbol

Parameter

Vpwl

Ipwl

Vpwh

Ipwh

Vpwhhyst

PWM low level voltage

PWM pin current

PWM high level voltage

PWM pin current

PWM hysteresis

voltage

Vpwcl

Vpwtest

Ipwtest

PWM clamp voltage

Test mode PWM pin

voltage

Test mode PWM pin

current

Test conditions

Vpw = 1.5V

Vpw = 3.25V

Ipw = 1 mA

Ipw = -1 mA

Vpwtest = -2.0 V

Min.

1

3.25

Typ.

Max. Unit

1.5

V

µA

V

10

µA

0.5

V

VCC+0.3 VCC+0.7 VCC+1.0 V

-5.0

-3.5

-2.0

V

-3.5

-2.0

-0.5

V

-2000

-500

µA

Table 9. Logic inputs

Symbol

Parameter

VIL

IINL

VIH

IINH

VIHYST

Input low level voltage

Input current

Input high level voltage

Input current

Input hysteresis voltage

VICL

Input clamp voltage

Test conditions

VIN = 1.5 V

VIN = 3.25 V

IIN=1mA

IIN=-1mA

Min.

1

3.25

0.5

6.0

-1.0

Typ.

6.8

-0.7

Max. Unit

1.5 V

µA

V

10 µA

V

8.0 V

-0.3 V

8/20

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