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VND670SP_08

Dual high-side switch with dual Power MOSFET gate driver (bridge configuration)

STMicroelectronics 

VND670SP

Dual high-side switch with dual Power MOSFET

gate driver (bridge configuration)

Features

Type

VND670SP

RDS(on)

30mΩ(1)

1. Per each channel.

IOUT

15A(1)

VCC

40V

■ 5V logic level compatible inputs

■ Gate drive for two external power MOSFET

■ Undervoltage and overvoltage shutdown

■ Overvoltage clamp

■ Thermal shutdown

■ Cross-conduction protection

■ Current limitation

■ Very low standby power consumption

■ PWM operation up to 10 KHz

■ Protection against loss of ground and loss of

VCC

■ Reverse battery protection

10

1

PowerSO-10

Description

The VND670SP is a monolithic device made

using STMicroelectronics VIPower technology

M0-3, intended for driving motors in full bridge

configuration. The device integrates two 30 mW

Power MOSFET in high-side configuration, and

provides gate drive for two external Power

MOSFET used as low side switches. INA and INB

allow to select clockwise or counter clockwise

drive or brake; DIAGA/ENA, DIAGB/ENB allow to

disable one half bridge and feedback diagnostic.

Built-in thermal shutdown, combined with a

current limiter, protects the chip in

overtemperature and short circuit conditions.

Short to battery protects the external connected

low-side Power MOSFET.

Table 1. Device summary

Package

PowerSO-10

Tube

VND670SP

Order codes

Tape and reel

VND670SP13TR

December 2008

Rev 2

1/20

www.st.com

20

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