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VND670SP_08

Dual high-side switch with dual Power MOSFET gate driver (bridge configuration)

STMicroelectronics 

Electrical specifications

2

Electrical specifications

VND670SP

Figure 3. Current and voltage conventions

IINA

IINB

IENA

IENB

VCC

INA

INB

DIAGA/ENA

DIAGB/ENB

PWM

Ipw

OUTA

OUTB

GATEA

GATEB

GND

VINA VINB VENA VENB Vpw

IGND

ICC

IOUTA

VCC

IOUTB

IgsA

VOUTA

IgsB

VOUTB

VgsA

VgsB

2.1

Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality document.

Table 3. Absolute maximum ratings

Symbol

Parameter

VCC

Imax1

Imax2

IR

IIN

IEN

Ipw

Igs

VESD

Tj

Tstg

Supply voltage

Maximum output current (continuous)

Maximum output current (250ms pulse duration)

Reverse DC output current

Input current

Enable pin current

PWM pin current

Output gate current

Electrostatic discharge ( R = 1.5KΩ; C = 100pF)

Junction operating temperature

Storage temperature

Value

Unit

-0.3..40

V

15

A

20

A

- 15

A

+/- 10

mA

+/- 10

mA

+/- 10

mA

+/- 20

mA

2000

V

- 40 to 150

°C

- 55 to 150

°C

6/20

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