W215B Просмотр технического описания (PDF) - Cypress Semiconductor
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W215B Datasheet PDF : 13 Pages
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PRELIMINARY
W215B
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Parameter
VDD, VIN
TSTG
TB
TA
ESDPROT
Description
Voltage on any pin with respect to GND
Storage Temperature
Ambient Temperature under Bias
Operating Temperature
Input ESD Protection
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
–55 to +125
°C
0 to +70
°C
2 (min.)
kV
DC Electrical Characteristics
TA = 0°C to +70°C, VDDQ3 = 3.3V±5% (3.135–3.465V), fXTL = 14.31818 MHz, VDDQ2 = 3.3V±5%
Parameter
Description
Test Condition
Min.
Supply Current
IDDQ3
Supply Current (3.3V)
CPU0:3 = 100 MHz
Outputs Loaded[1]
IDDQ2
Supply Current (3.3V)
CPU0:3 = 100 MHz
Outputs Loaded[1]
Logic Inputs
VIL
Input Low Voltage
VIH
Input High Voltage
2.0
IIL
Input Low Current[2]
IIH
Input High Current[2]
Clock Outputs
VOL
Output Low Voltage
IOL = 2 mA
VOH
Output High Voltage
IOH = –1 mA
3.1
IOL
Output Low Current
CPU0:3
VOL = 1.5V
SDRAM0:7
VOL = 1.5V
PCI_F, PCI0:5
VOL = 1.5V
IOAPIC
VOL = 1.5V
REF0
VOL = 1.5V
REF1
VOL = 1.5V
48/24MHZ
VOL = 1.5V
IOH
Output High Current
CPU0:3
VOL = 1.5V
SDRAM0:7
VOL = 1.5V
PCI_F, PCI0:5
VOL = 1.5V
IOAPIC
VOL = 1.5V
REF0
VOL = 1.5V
REF1
VOL = 1.5V
48/24MHZ
VOL = 1.5V
Notes:
1. All clock outputs loaded with maximum lump capacitance test load specified in AC Electrical Characteristics section.
2. W215B logic inputs have internal pull-up devices (not CMOS level).
Typ.
150
80
140
110
110
95
75
70
70
120
95
95
95
80
62
60
Max.
0.8
10
10
50
Unit
mA
mA
V
V
µA
µA
mV
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
4
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