TC58NVG1S3BFT00 Просмотр технического описания (PDF) - Toshiba

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TC58NVG1S3BFT00

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

(7) Status Read during a Read operation

TC58NVG1S3BFT00/TC58NVG1S8BFT00

Command 00

CE

WE

RY/BY

RE

Address N

00

[A]

30

70

Status Read

command input

Status Read

Status output

.

The device status can be read out by inputting the Status Read command “70h” in Read mode. Once the

device has been set to Status Read mode by a “70h” command, the device will not return to Read mode

unless the Read command “00h” is input during [A]. In this case, data output starts automatically from

address N and address input is unnecessary

(8) Auto programming failure

80

10

Address Data

M input

80

10

M

Fail

70

I/O

80

10

Address Data

N input

If the programming result for page address M is Fail, do not try to program the

page to address N in another block without the data input sequence.

Because the previous input data has been lost, the same input sequence of 80h

command, address and data is necessary.

N

(9) RY / BY : termination for the Ready/Busy pin ( RY / BY )

A pull-up resistor needs to be used for termination because the RY / BY buffer consists of an open drain

circuit.

VCC

VCC

Device

R

RY / BY

CL

Ready

VCC

1.0 V

tf

Busy

1.0 V

tr

3.0 V

VSS

1.5 µs

tr 1.0 µs

This data may vary from device to device.

We recommend that you use this data as a

reference when selecting a resistor value.

0.5 µs

0

30

tf

tr

VCC = 3.3 V

Ta = 25°C

15 ns

CL = 100 pF

10 ns tf

5 ns

1 KΩ 2 KΩ 3 KΩ 4 KΩ

R

2003-10-30A

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