STPS1H100AY Просмотр технического описания (PDF) - STMicroelectronics
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STPS1H100AY Datasheet PDF : 9 Pages
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STPS1H100-Y
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
PF(AV)(W)
0.8
0.7
0.6
0.5
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
0.4
0.3
0.2
T
0.1
IF(AV)(A)
δ=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
IF(AV)(A)
1.2
1.0
0.8
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
0.6
Rth(j-a)=200°C/W
0.4
0.2
0.0
0
T
δ=tp/T
25
tp
50
Tamb(°C)
75
100
Rth(j-a)=Rth(j-l)
SMB
SMA
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values) (SMB)
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
IM(A)
10
SMB
9
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ =0.5
1.E-02
t(s)
1.E-01
Ta=25 °C
Ta=75 °C
Ta=110 °C
1.E+00
IM(A)
8
SMA
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ =0.5
1.E-02
t(s)
1.E-01
Ta=25 °C
Ta=75 °C
Ta=110 °C
1.E+00
Doc ID 17935 Rev 1
3/9
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