STB19NM65N Просмотр технического описания (PDF) - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

Electrical ratings

STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, ID= IAS, VDD= 50 V)

Max value

Unit

4

A

400

mJ

4/19

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