STB19NM65N Просмотр технического описания (PDF) - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

Test circuit

3

Test circuit

STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load

Figure 21. Unclamped Inductive load test

switching and diode recovery times

circuit

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

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