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UT62L12916

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.0

UTRON

UT62L12916/UT62L12916(I)

128K X 16 BIT LOW POWER CMOS SRAM

DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃/-40℃ to 85℃(I))

PARAMETER

Vcc for Data Retention

Data Retention Current

SYMBOL

VDR

IDR

Chip Disable to Data

tCDR

Retention Time

Recovery Time

tR

TEST CONDITION

CE ≧VCC-0.2V or CE2≦0.2V

Vcc=1.5V

-L

CE ≧VCC-0.2V

- LL

or CE2≦0.2V

See Data Retention

Waveforms (below)

MIN.

1.5

-

-

0

5

TYP.

-

1

0.5

MAX.

3.6

50

20

UNIT

V

µA

µA

-

-

ms

-

-

ms

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) ( CE controlled)

VCC

CE

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

CE ≧ VCC-0.2V

Vcc(min.)

tR

VIH

Low Vcc Data Retention Waveform (2) (CE2 controlled)

VCC

CE2

VCC(min.)

tCDR

VIL

VDR ≧ 1.5V

CE2 ≦ 0.2V

VCC(min.)

tR

VIL

Low Vcc Data Retention Waveform (3) ( LB , UB controlled)

VCC

LB,UB

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

LB,UB ≧ VCC-0.2V

Vcc(min.)

tR

VIH

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

9

P80042

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