UT62L12916 Просмотр технического описания (PDF) - Utron Technology Inc

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UT62L12916

128K X 16 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



Rev. 1.0

UTRON

FEATURES

Fast access time :

55ns (max.) for Vcc=2.7V~3.6V

70/100ns (max.) for Vcc=2.5V~3.6V

CMOS low power operating

Operating current : 45/35/25mA (Icc max.)

Standby current : 20uA(max.) L–version

2uA(max.) LL-version

Single 2.5V~3.6V power supply

Operating temperature:

Commercial : 0℃~70℃

Industrial : -40℃~85℃

All TTL compatible inputs and outputs

Fully static operation

Three state outputs

Data retention voltage : 1.5V (min.)

Data byte control : LB (I/O1~I/O8)

UB (I/O9~I/O16)

Package : 48-pin 6mm × 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

UT62L12916/UT62L12916(I)

128K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION

The UT62L12916 is a 2,097,152-bit low power CMOS

static random access memory organized as 131,072

words by 16 bits.

The UT62L12916 operates from a single 2.5V ~ 3.6V

power supply and all inputs and outputs are fully TTL

compatible.

The UT62L12916 is designed for low power system

applications. It is particularly well suited for use in

high-density low power system applications.

A0-A17

Vcc

Vss

I/O1-I/O8

Lower Byte

I/O9-I/O16

Upper Byte

DECODER

I/O DATA

CIRCUIT

128K X 16

MEMORY

ARRAY

COLUMN I/O

CE2

CE

OE

WE

LB

UB

CONTROL

CIRCUIT

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

2

P80042

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