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PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Philips Electronics 

NXP Semiconductors

PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using

103

IAL

(A)

102

10

003aae954

(1)

(2)

1

10-1

10-3

10-2

10-1

1

10

tAL (ms )

Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time

104

ID

(A)

103

102

10

1

Limit R DS on = VDS / ID

DC

003aae941

tp =10  s

100 s

1 ms

10 ms

100 ms

10-1

10-1

1

10

102

VDS (V)

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN1R0-30YLC

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 4 July 2011

© NXP B.V. 2011. All rights reserved.

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