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PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Philips Electronics 

PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 4 — 4 July 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

 Ultra low Rdson and low parasitic

inductance

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

Table 1.

Symbol

VDS

ID

Quick reference data

Parameter

drain-source voltage

drain current

Ptot

total power dissipation

Tj

junction temperature

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

25 °C ≤ Tj ≤ 175 °C

Tmb = 25 °C; VGS = 10 V;

see Figure 1

Tmb = 25 °C; see Figure 2

Min Typ Max Unit

-

-

30 V

[1] -

-

100 A

-

-

-55 -

272 W

175 °C

VGS = 4.5 V; ID = 25 A;

Tj = 25 °C; see Figure 12

VGS = 10 V; ID = 25 A;

Tj = 25 °C; see Figure 12

-

1.1 1.4 mΩ

-

0.85 1.15 mΩ

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