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PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Philips Electronics 

NXP Semiconductors

PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using

Table 1. Quick reference data …continued

Symbol Parameter

Conditions

Dynamic characteristics

QGD

gate-drain charge

VGS = 4.5 V; ID = 25 A;

VDS = 15 V; see Figure 14;

see Figure 15

QG(tot) total gate charge

VGS = 4.5 V; ID = 25 A;

VDS = 15 V; see Figure 15;

see Figure 14

[1] Continuous current is limited by package.

2. Pinning information

Min Typ Max Unit

-

14.6 -

nC

-

50 -

nC

Table 2.

Pin

1

2

3

4

mb

Pinning information

Symbol Description

S

source

S

source

S

source

G

gate

D

mounting base; connected to drain

Simplified outline

mb

1234

SOT669 (LFPAK;

Power-SO8)

3. Ordering information

Graphic symbol

D

G

mbb076 S

Table 3. Ordering information

Type number

Package

Name

PSMN1R0-30YLC LFPAK; Power-SO8

Description

plastic single-ended surface-mounted package; 4 leads

4. Marking

Version

SOT669

Table 4. Marking codes

Type number

PSMN1R0-30YLC

[1] % = placeholder for manufacturing site code

Marking code[1]

1C030L

PSMN1R0-30YLC

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 4 July 2011

© NXP B.V. 2011. All rights reserved.

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