PML340SN Просмотр технического описания (PDF) - NXP Semiconductors.
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PML340SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML340SN
N-channel TrenchMOS standard level FET
10
ID
(A)
8
003aab163
VGS (V) = 10 5
4.5
6
4.4
4
4.2
2
4
3.8
0
0
1
2
3
4
5
VDS (V)
800
3.8 4 4.2
RDSon
(mΩ)
600
400
003aab164
4.5
VGS (V) = 5
10
200
0
0
2
4
6
8 ID (A) 10
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
10
ID
(A)
8
6
003aab165
3
a
2
03al52
4
Tj = 150 °C
25 °C
1
2
0
0
1
2
3
4
5
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
a = -R----D---RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PML340SN_1
Product data sheet
Rev. 01 — 24 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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