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PML340SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML340SN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PML340SN
HVSON8
4. Limiting values
Description
Version
plastic thermal enhanced very thin small outline package; no leads; SOT873-1
8 terminals; body 3.3 × 3.3 × 0.85 mm
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 3.5 A;
tp = 0.05 ms; VDS ≤ 220 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
Min
Max Unit
-
220
V
-
±20
V
-
7.3
A
-
4.4
A
-
14
A
-
50
W
−55
+150 °C
−55
+150 °C
-
7.6
A
-
14
A
-
22
mJ
PML340SN_1
Product data sheet
Rev. 01 — 24 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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