PML340SN Просмотр технического описания (PDF) - NXP Semiconductors.

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PML340SN

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

Philips Semiconductors

PML340SN

N-channel TrenchMOS standard level FET

120

Pder

(%)

80

03ne36

120

Ider

(%)

80

03ne37

40

40

0

0

50

100

150

200

Tmb (°C)

Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

102

ID

Limit RDSon = VDS / ID

(A)

10

0

0

50

100

150

200

Tmb (°C)

Ider = -I--D----(-I-2-D-5---°--C---) × 100 %

Fig 2. Normalized continuous drain current as a

function of mounting base temperature

003aab516

tp = 10 µ s

100 µs

1

DC

1 ms

10 ms

10-1

1

10

102

VDS (V)

103

Tmb = 25 °C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PML340SN_1

Product data sheet

Rev. 01 — 24 August 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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