PML260SN Просмотр технического описания (PDF) - Philips Electronics
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PML260SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10−1
ID
(A)
10−2
10−3
10−4
10−5
03aa35
min typ max
0
−60
0
60
120
180
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10−6
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
003aab066
6
4
2
0
0
4
8
12 QG (nC) 16
ID = 2.6 A; VDS = 100 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 12. Gate charge waveform definitions
PML260SN_2
Product data sheet
Rev. 02 — 29 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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