PML260SN Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
PML260SN Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03ne36
120
Ider
(%)
80
03ne37
40
40
0
0
50
100
150
200
Tmb (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
102
ID
(A)
10
Limit RDSon = VDS / ID
003aab281
tp = 10 µ s
100 µs
DC
1
1 ms
10 ms
10-1
10-1
1
10
102
VDS (V)
103
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PML260SN_2
Product data sheet
Rev. 02 — 29 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3 of 12
Share Link: 