PML260SN Просмотр технического описания (PDF) - Philips Electronics

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PML260SN

N-channel TrenchMOS standard level FET

Philips Electronics 

PML260SN

N-channel TrenchMOS standard level FET

Rev. 02 — 29 May 2006

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a

surface-mounted plastic package using TrenchMOS technology.

1.2 Features

I Standard level threshold

I Very low thermal impedance

I Low profile and small footprint

I Low on-state resistance

1.3 Applications

I Primary side switching

I Portable appliances

I DC-to-DC converters

1.4 Quick reference data

I VDS ≤ 200 V

I RDSon ≤ 294 mΩ

I ID ≤ 8.8 A

I QGD = 4.2 nC (typ)

2. Pinning information

Table 1.

Pin

1, 2, 3

4

5, 6, 7, 8

Pinning

Description

source (S)

gate (G)

drain (D)

Simplified outline

8765

1234

Transparent

top view

SOT873-1 (HVSON8)

Symbol

D

G

mbb076 S

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