PHB101NQ04T Просмотр технического описания (PDF) - Philips Electronics

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PHB101NQ04T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB101NQ04T

N-channel TrenchMOS™ standard level FET

80

IS VGS = 0 V

(A)

60

03aq96

40

175 °C

Tj = 25 °C

20

10

VGS

(V)

8

ID = 25 A

Tj = 25 °C

6

4

2

14 V

03aq98

VDD = 32 V

0

0

0.3

0.6

0.9

1.2

VSD (V)

0

0

10

20

30 QG (nC) 40

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 25 A; VDD = 14 V and 32 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 13167

Product data

Rev. 01 — 12 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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