PHB101NQ04T Просмотр технического описания (PDF) - Philips Electronics
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PHB101NQ04T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB101NQ04T
N-channel TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03aq90
40
40
0
0
50
100
150
200
Tmb (°C)
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
Limit RDSon = VDS / ID
102
DC
10
0
0
50
100
150
200
Tmb (°C)
Ider = -I-------I--D--------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03aq92
tp = 10 µ s
100 µ s
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13167
Product data
Rev. 01 — 12 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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