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PHB101NQ04T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB101NQ04T

N-channel TrenchMOS™ standard level FET

6. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Figure 9 and 10

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

IDSS

drain-source leakage current

IGSS

gate-source leakage current

VDS = 40 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±20 V; VDS = 0 V

RDSon drain-source on-state resistance

VGS = 10 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

Dynamic characteristics

Qg(tot)

Qgs

total gate charge

gate-source charge

ID = 25 A; VDD = 32 V; VGS = 10 V;

Figure 13

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Figure 11

Crss

td(on)

tr

reverse transfer capacitance

turn-on delay time

rise time

VDD = 30 V; RL = 1.2 Ω;

VGS = 10 V; RG = 10 Ω

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12

trr

reverse recovery time

IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V

Qr

recovered charge

Min Typ Max Unit

40 -

-

V

36 -

-

V

2

3

4

V

1

-

-

V

-

-

4.4 V

-

-

1

µA

-

-

500 µA

-

2

100 nA

-

6.6 8

mΩ

-

15.2 mΩ

-

36.6 -

nC

-

9.8 -

nC

-

12.6 -

nC

-

2020 -

pF

-

485 -

pF

-

215 -

pF

-

20 -

ns

-

51 -

ns

-

51 -

ns

-

33 -

ns

-

0.85 1.2 V

-

53 -

ns

-

44 -

nC

9397 750 13167

Product data

Rev. 01 — 12 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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