PHP23NQ11T Просмотр технического описания (PDF) - Philips Electronics

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PHP23NQ11T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP23NQ11T

N-channel TrenchMOS™ standard level FET

20

ID VGS = 0 V

(A)

15

10

175 °C

5

03ao55

Tj = 25 °C

15

VGS

(V)

ID = 23 A

Tj = 25 °C

10

VDD = 20 V

5

80 V

03ao57

0

0

0.3

0.6

0.9 VSD (V) 1.2

0

0

10

20

30

40

QG (nC)

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 23 A; VDD = 20 V and 80 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 13182

Product data

Rev. 01 — 17 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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