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PHP23NQ11T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP23NQ11T

N-channel TrenchMOS™ standard level FET

3. Ordering information

Table 2: Ordering information

Type number

Package

Name

Description

Version

PHP23NQ11T

TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

VDGR

VGS

ID

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

IDM

peak drain current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

25 °C ≤ Tj ≤ 175 °C

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

Tmb = 25 °C; VGS = 10 V; Figure 2 and 3

Tmb = 100 °C; VGS = 10 V; Figure 2

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3

Tmb = 25 °C; Figure 1

IS

source (diode forward) current (DC) Tmb = 25 °C

ISM

peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID = 14 A;

tp = 0.1 ms; VDD ≤ 100 V; RGS = 50 Ω;

VGS = 10 V; starting at Tj = 25 °C

Min

Max Unit

-

110

V

-

110

V

-

±20

V

-

23

A

-

16

A

-

92

A

-

100

W

−55

+175 °C

−55

+175 °C

-

23

A

-

92

A

-

93

mJ

9397 750 13182

Product data

Rev. 01 — 17 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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