PHP23NQ11T Просмотр технического описания (PDF) - Philips Electronics
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PHP23NQ11T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHP23NQ11T
N-channel TrenchMOS™ standard level FET
20
ID
(A)
15
10
5
0
0
VGS = 10 V 8 V
6V
0.5
1
03ao52
Tj = 25 °C
5.4 V
5.2 V
5V
4.8 V
4.6 V
4.4 V
1.5 VDS (V) 2
20
ID VDS > ID x RDSon
(A)
15
03ao54
10
5
150 °C
Tj = 25 °C
0
0
2
4 VGS (V) 6
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.2
03ao53
3
4.6 V 4.8 V 5 V 5.2 V
RDSon
Tj = 25 °C
(Ω)
a
5.4 V
0.15
2
03aa29
0.1
0.05
0
0
5
Tj = 25 °C
6V
8 V VGS = 10 V
10
15 ID (A) 20
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
1
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13182
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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