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PHB108NQ03LT

N-channel TrenchMOS™ logic level FET

NXP Semiconductors. 

Philips Semiconductors

PHB/PHD/PHU108NQ03LT

N-channel TrenchMOS™ logic level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Rth(j-mb)

Rth(j-a)

thermal resistance from junction to mounting base Figure 4

thermal resistance from junction to ambient

SOT404

mounted on a printed-circuit

board; minimum footprint;

vertical in still air

SOT428

mounted on a printed-circuit

board; minimum footprint;

vertical in still air

mounted on a printed-circuit

board; vertical in still air;

SOT404 minimum footprint

SOT533

vertical in free air

Min Typ Max Unit

-

-

0.8 K/W

-

50 -

K/W

-

75 -

K/W

-

50 -

K/W

-

70 -

K/W

1

03ar60

Zth(j-mb)

(K/W)

δ =0.5

0.2

10-1 0.1

0.05

0.02

P

δ = tp

T

single pulse

10-2

10-5

10-4

10-3

10-2

tp

t

T

10-1

1

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

9397 750 14707

Product data sheet

Rev. 03 — 18 April 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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