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PHB108NQ03LT

N-channel TrenchMOS™ logic level FET

NXP Semiconductors. 

PHB/PHD/PHU108NQ03LT

N-channel TrenchMOS™ logic level FET

Rev. 03 — 18 April 2005

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS™ technology.

1.2 Features

s Logic level threshold

s Lead-free construction

s Very low on-state resistance

s Low gate charge

1.3 Applications

s DC-to-DC converter

s Switch-mode power supplies

1.4 Quick reference data

s VDS ≤ 25 V

s RDSon ≤ 6 mΩ

s ID ≤ 75 A

s Qgd = 5.6 nC (typ)

2. Pinning information

Table 1: Pinning

Pin

Description

1

gate (G)

2

drain (D)

3

source (S)

mb

mounting base;

connected to drain

Simplified outline

[1]

mb

2

13

mb

2

1

3

SOT404 (D2PAK) SOT428 (DPAK)

[1] It is not possible to make a connection to pin 2 of the SOT404 and SOT428 packages.

Symbol

mb

D

G

mbb076 S

123

SOT533 (IPAK)

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