PHB45NQ15T Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PHB45NQ15T Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
PHB45NQ15T
N-channel TrenchMOS standard level FET
80
RDSon
(mΩ)
Tj = 25 °C
60
40
03ao20
VGS = 4.4 V 4.6 V 4.8 V
5V
10 V
20
3
a
2
1
03al51
0
0
10
20
30
40
50
ID (A)
0
−75
−25
25
75
125
175
Tj (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
VDS = 30 V
6
4
2
03ao24
75 V
120 V
104
C
(pF)
103
102
03ao23
Ciss
Coss
Crss
0
0
10
20
30
40
QG (nC)
10
10-1
1
10
VDS (V) 102
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
8 of 13
Share Link: 