PHB45NQ15T Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
PHB45NQ15T Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
PHB45NQ15T
N-channel TrenchMOS standard level FET
102
ID
(A)
Limit RDSon = VDS / ID
10
DC
1
1
10
tp = 10 μ s
03ao18
100 μs
1 ms
10 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
Share Link: 