PHB45NQ15T Просмотр технического описания (PDF) - NXP Semiconductors.
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PHB45NQ15T Datasheet PDF : 13 Pages
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NXP Semiconductors
PHB45NQ15T
N-channel TrenchMOS standard level FET
50
ID
Tj = 25 °C
(A)
40
30
20
10
0
0
1
10 V 5 V
03ao19
4.8 V
4.6 V
4.4 V
4.2 V
4V
3.8 V
VGS = 3.6 V
2
3
4
VDS (V)
50
ID
(A)
VDS > ID x RDSon
40
03ao21
30
20
10
0
0
175 °C
Tj = 25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5
VGS(th)
(V)
4
max
03aa32
10−1
ID
(A)
10−2
03aa35
min typ max
3
typ
10−3
2
min
10−4
1
10−5
0
−60
0
60
120
180
Tj (°C)
10−6
0
2
4
6
VGS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
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