MAAPGM0041-DIE Просмотр технического описания (PDF) - Tyco Electronics
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MAAPGM0041-DIE Datasheet PDF : 6 Pages
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RO-P-DS-3042- -
1.3W X/Ku-Band Power Amplifier
11.0-15.0 GHz
Preliminary Information
Features
♦ 11.0-15.0 GHz Operation
♦ 1.3 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® MESFET Process
11.0-15.0 GHz GaAs MMIC Amplifier
Primary Applications
♦ Point-to-Point Radio
♦ SatCom
♦ Radio Location
Description
The MAAPGM0041-DIE is a 3-stage 1.3 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG®) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 16 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
2nd Harmonic
3rd Harmonic
Symbol
f
POUT
PAE
P1dB
G
VSWR
VSWR
IGG
IDD
OTOI
NF
2f
3f
Typical
11.0-15.0
31
32
30
20
2:1
1.5:1
<2
< 600
35
6.5
-30
-40
Units
GHz
dBm
%
dBm
dB
mA
mA
dBm
dB
dBc
dBc
1. TB = MMIC Base Temperature
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