LX5512ELQ Просмотр технического описания (PDF) - Microsemi Corporation
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LX5512ELQ Datasheet PDF : 11 Pages
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LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
EVALUATION BOARD
Recommended BOM
Location
Value
C1,C3
C2
C4
1 uF (0603)
10 nF(0402)
2.2 pF (0402)
C5,C7
C6
120 pF (0402)
47 pF (0402)
R1,R2
R3
R4
R5
R6
R7
TL1
TL2
TL3
Substrate
50 Ω (0402)
300 Ω (0402)
100 Ω (0402)
10 Ω (0402)
5 Ω (0402)
100 kΩ (0402)
120/10 mil (L/W)
30/10 mil (L/W)
70/10 mil (L/W)
10 mil GETEK
εr = 3.9, tan δ = 0.01
50Ω Microstrip width: 22 mil
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9
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