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LX5512ELQ

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

Microsemi Corporation 

LX5512E

TM

®

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

PRODUCTION DATA SHEET

ELECTRICAL CHARACTERISTICS

Test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C, unless otherwise specified

Parameter

Symbol

Test Conditions

Frequency Range

Power Gain at Pout = 19dBm

EVM at Pout = 19dBm

Total Current at Pout = 19dBm

Quiescent Current

Bias Control Reference Current

Small-Signal Gain

Gain Flatness

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Reverse Isolation

Second Harmonic

Third Harmonic

Total Current at Pout=23dBm

2nd side lobe at 23 dBm

Ramp-On Time

Detector response

f

Gp

Ic_total

Icq

Iref

S21

ΔS21

ΔS21

S11

S22

S12

tON

64GQAM / 54Mbps

For Icq = 50mA

Over 100MHz

0°C to +70°C

Pout = 19dBm

Pout = 19dbm

11 Mbps CCK

11 Mbps CCK

10 ~ 90%

19 dBm OFDM, 100kOhm’s

Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.

LX5512E

Min Typ Max

2.4

2.5

34

3.0

130

50

1.6

34

1.5

1.5

8

10

-50

-40

-40

200

-50

100

1.5

Units

GHz

dB

%

mA

mA

mA

dB

dB

dB

dB

dB

dB

dBc

dBc

mA

dBc

ns

V

Copyright © 2003

Rev. 2.0c, 2005-08-18

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

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