LH51BV1000JY-70LL Просмотр технического описания (PDF) - Sharp Electronics

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LH51BV1000JY-70LL

CMOS 1M (128K × 8) Static Ram

Sharp Electronics 

CMOS 1M (128K × 8) Static RAM

LH51BV1000J

tWC

ADDRESS

OE

CE1

CE2

tAS

(NOTE 3)

tAW

tCW

(NOTE 2)

tCW

(NOTE 2)

tWP

(NOTE 1)

(NOTE 4)

tWR

tWR

tWR

WE

DOUT

(NOTE 6)

tOHZ

tDW

tDH

(NOTE 5)

DIN

DATA VALID

NOTES:

1. A write occurs during the overlap of a LOW CE1, a HIGH CE2 and a LOW WE,

A write begins at the latest transition among CE1 going LOW, CE2 going HIGH

and WE going LOW. A write ends at the earliest transition among CE1 going

HIGH, CE2 going LOW and WE going HIGH. tWP is measured from the beginning

of write to the end of write.

2. tCW is measured from the latter of CE1 going LOW or CE2 going HIGH to the

end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR1 applies

in case a write ends at CE1 or WE going HIGH. tWR2 applies in case a write

ends at CE2 going LOW.

5. During this period, I/O pins are in the output state, therefore the input signals

of opposite phase to the outputs must not be applied.

6. If CE1 goes LOW simultaneously with WE going LOW or after WE going LOW,

the outputs remain in high impedance state.

7. If CE1 goes HIGH simulaneously with WE going HIGH or before WE going HIGH,

the outputs remain in high impedance state.

Figure 4. Write Cycle (OE Controlled)

51BV1000-4

7

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