IRG4BC20UD-S Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

Список матч

IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

1000

V GE = 0V,

f = 1MHz

C ies = C ge + C gc , Cce SH OR TE D

C res = C gc

800

C oes = C ce + C gc

C ie s

600

C oes

400

C re s

200

0

A

1

10

100

VCE, Collector-to-Em itter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC20UD-S

20

VCE = 400V

IC = 6.5A

16

12

8

4

0

A

0

5

10

15

20

25

30

Qg , Total G ate C harge (nC )

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

0.32

VCC = 480V

VGE = 15V

TJ = 25°C

I C = 6.5A

0.31

0.30

0.29

0

A

10

20

30

40

50

60

R G , G a te R e sista n ce ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

10

RG = 50 Ω

V GE = 15V

V CC = 480V

IC = 1 3 A

1

IC = 6.5A

IC = 3.3A

0.1

-60 -40 -20 0

A

20 40 60 80 100 120 140 160

TJ , J u n ctio n T e m p e ra tu re (°C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

Share Link: