IRG4BC20UD-S Просмотр технического описания (PDF) - International Rectifier

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IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

12

10

8

6

4

2

0

0.1

60% of rated

voltage

IRG4BC20UD-S

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate d rive a s spe cifie d

Tu rn -on los ses includ e

effe cts o f re verse reco very

P ow er Dissip ation = 13W

A

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25°C

TJ = 150°C

10

1

0.1

0.1

VGE = 15V

20µs PULSE WIDTH

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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A

100

TJ = 150°C

10

TJ = 25 °C

1

V CC = 10V

0.1

5µs PULSE W IDTH A

4

6

8

10

12

VG E , Ga te -to-Em itter Volta ge (V)

Fig. 3 - Typical Transfer Characteristics

3

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