IRG4BC20UD-S Просмотр технического описания (PDF) - International Rectifier

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IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC20UD-S

14

VGE = 15V

12

10

8

6

4

2

0

25

50

75

100

125

150

TC , C ase Tem perature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

2.6

VGE = 15V

80µs PULSE W IDTH

2.2

IC = 13A

1.8

IC = 6.5A

1.4

I C = 3.3A

1.0

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Tem perature (°C)

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

1 D = 0.50

0 .2 0

0 .10

0.0 5

0 .1

0.0 2

0 .01

SINGLE PULSE

(THERMAL RESPONSE)

PD M

t1

t2

Notes:

1. Duty factor D = t1 / t 2

0 .0 1

2. P eak TJ = P DM x Z th J C + T C

0.00001

0 .0 0 0 1

0.001

0 .0 1

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

4

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