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HM514170CJ-7

262,144-word × 16-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM514170C, HM51S4170C Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to VSS

VT

Supply voltage relative to VSS

VCC

Short circuit output current

Iout

–1.0 to +7.0

V

–1.0 to +7.0

V

50

mA

Power dissipation

Operating temperature

PT

1.0

W

Topr

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol

Min

Typ

Max

Supply voltage

VSS

0

0

0

VCC

4.5

5.0

5.5

Input high voltage

VIH

2.4

—

6.5

Input low voltage

VIL

–1.0

—

0.8

Notes: 1. All voltage referred to VSS

2. The supply voltage with all VCC pins must be on the same level.

The supply voltage with all VSS pins must be on the same level.

Unit

V

V

V

V

Note

2

1, 2

1

1

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)

Parameter

Operating current*1, *2

Standby current

HM514170C, HM51S4170C

-7

-8

Symbol Min Max Min Max

I CC1

—

120 —

105

I CC2

—

2

—

2

—

1

—

1

Standby current

(L-version)

I CC2

—

200 —

200

RAS-only refresh current*2 ICC3

—

120 —

100

Unit Test Conditions

mA RAS, CAS cycling

tRC = min

mA TTL interface

RAS, CAS = VIH

Dout = High-Z

mA CMOS interface

RAS, CAS, UWE, LWE, OE ≥

VCC – 0.2 V

Dout = High-Z

µA CMOS interface

RAS, CAS, OE, UWE, LWE ≥

VCC – 0.2 V

Dout = High

mA tRC = min

6

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