HEF4011UB Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
HEF4011UB Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
Quadruple 2-input NAND gate
Product specification
HEF4011UB
gates
APPLICATION INFORMATION
Some examples of applications for the HEF4011UB are shown below.
Because of the fact that this circuit is unbuffered, it is suitable for use in (partly) analogue circuits.
INH
O
L
H
H
OSC
In Fig.9 the oscillation frequency is mainly determined by R1C1,
provided R1 << R2 and R2C2 << R1C1.
The function of R2 is to minimize the influence of the forward voltage
across the protection diodes on the frequency; C2 is a stray (parasitic)
capacitance. The period Tp is given by Tp = T1 + T2, in which
T1
=
R1C1
In
V-----D---D-----+-----V----S---T-- a n d
VST
T2
=
R1C1
In
-2---V-----D---D-----–----V-----S---T-
VDD – VST
where
VST is the signal threshold level of the gate. The period is fairly
independent of VDD, VST and temperature. The duty factor, however, is
influenced by VST.
Fig.9 (a) Astable relaxation oscillator using two HEF4011UB gates; the diodes may be BAW62; C2 is a parasitic
capacitance.
(b) Waveforms at the points marked A, B, C and D in the circuit diagram.
January 1995
6
Share Link: 