HEF4011UB Просмотр технического описания (PDF) - Philips Electronics
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HEF4011UB Datasheet PDF : 8 Pages
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Philips Semiconductors
Quadruple 2-input NAND gate
Product specification
HEF4011UB
gates
Fig.7 Test set-up for measuring forward transconductance gfs = dio/dvi at vo is constant (see also graph Fig.8).
A : average,
B : average + 2 s,
C : average − 2 s, where ‘s’ is the observed standard deviation.
Fig.8 Typical forward transconductance gfs as a function of the supply voltage at Tamb = 25 °C.
January 1995
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