HCF4034 Просмотр технического описания (PDF) - STMicroelectronics
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HCF4034 Datasheet PDF : 16 Pages
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HCC/HCF4034B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns)
Symbol
Parameter
tPHL, tPLH
Propagation Delay Time :
A (B) Parallel Data in to
B (A) Parallel Data Out
Test Conditions
Value
Unit
V DD (V) Min. Typ. Max.
5
350 700
10
120 240
ns
15
85 170
tPLZ, tPHZ 3-state Propagation Delay Time
tPZL, tPZH A/B or AE to ”A” OUT
5
200 400
10
80 160
ns
15
60 120
tTHL, tT LH Transition Time
ts etup
Data Setup Time Serial Data to
Clock
5
100 200
10
50 100
ns
15
40 80
5
80 160
10
30 60
ns
Parallel Data to Clock
15
20 40
5
25 50
10
15 30
ns
15
10 20
tw
High-level Pulse Width, AE, P/S,
A/S
5
175 350
10
70 140
ns
15
40 80
fCL
Maximum Clock Frequency
5
2
4
10
5
10
MHz
15
7
14
tW
Clock Pulse Width
5
125 250
10
50 100
ns
15
35 70
tr, tf* Clock Input Rise or Fall Time
5,10,15
15
µs
* If more than one unit is cascaded. tr should be made less than or equal to the sum of the transition time and the fixed propagation delay of the
output of the driving stage for the estimated capacitive load.
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