HB52RF649DC Просмотр технического описания (PDF) - Elpida Memory, Inc

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HB52RF649DC

512MB Unbuffered SDRAM S.O.DIMM

Elpida Memory, Inc 

HB52RF649DC-B, HB52RD649DC-B

Electrical Specifications

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Note: 1. Respect to VSS.

Symbol

VT

VCC

IOUT

PT

Topr

Tstg

Value

Unit

Note

–0.5 to VCC + 0.5

(≤ 4.6 (max.))

V

1

–0.5 to +4.6

V

1

50

mA

9.0

W

0 to +65

°C

–55 to +125

°C

DC Operating Conditions (TA = 0 to +65°C)

Parameter

Symbol

min.

max.

Unit

Note

Supply voltage

VCC

3.0

3.6

V

1, 2

VSS

0

0

V

3

Input high voltage

VIH

2.0

VCC + 0.3 V

1, 4

Input low voltage

VIL

–0.3

0.8

V

1, 5

Ambient illuminance

—

—

100

lx

Notes: 1. All voltage referred to VSS.

2. The supply voltage with all VCC pins must be on the same level.

3. The supply voltage with all VSS pins must be on the same level.

4. VIH (max.) = VCC + 2.0V for pulse width ≤ 3ns at VCC.

5. VIL (min.) = VSS – 2.0V for pulse width ≤ 3ns at VSS.

Data Sheet E0223H30 (Ver. 3.0)

8

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