HB52RF649DC Просмотр технического описания (PDF) - Elpida Memory, Inc

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HB52RF649DC

512MB Unbuffered SDRAM S.O.DIMM

Elpida Memory, Inc 

HB52RF649DC-B, HB52RD649DC-B

Byte No. Function described

Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

85

Manufacturer’s part number

(-75)

0 0 1 1 0 1 1 1 37

7

(-A6)

0 1 0 0 0 0 0 1 41

A

86

Manufacturer’s part number

(-75)

0 0 1 1 0 1 0 1 35

5

(-A6)

0 0 1 1 0 1 1 0 36

6

87

Manufacturer’s part number

88

Manufacturer’s part number

(-xxB)

(-xxBL)

0 1 0 0 0 0 1 0 42

0 0 1 0 0 0 0 0 20

0 1 0 0 1 1 0 0 4C

B

(Space)

L

89

Manufacturer’s part number

0 0 1 0 0 0 0 0 20

(Space)

90

Manufacturer’s part number

0 0 1 0 0 0 0 0 20

(Space)

91

Revision code

0 0 1 1 0 0 0 0 30

Initial

92

Revision code

0 0 1 0 0 0 0 0 20

(Space)

93

Manufacturing date

× × × × × × × × ××

Year code (BCD)

94

Manufacturing date

95 to 98 Assembly serial number

99 to 125 Manufacturer specific data

× × × × × × × × ××

*3

—————————

Week code (BCD)

*4

126

Intel specification frequency

0 1 1 0 0 1 0 0 64

100MHz

127

Intel specification /CE# latency

support

1 1 0 0 1 1 1 1 CF

CL = 2, 3

Notes: 1. All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High”. These

SPD are based on Rev.1.2B specification.

2. Byte72 is manufacturing location code. (ex: In case of Japan, byte72 is 4AH. 4AH shows “J” on ASCII

code.)

3. Bytes 95 through 98 are assembly serial number.

4. All bits of 99 through 125 are not defined (“1” or “0”).

Data Sheet E0223H30 (Ver. 3.0)

6

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