CY7C1335 Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1335 Datasheet PDF : 15 Pages
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PRELIMINARY
CY7C1335
Write Cycle Descriptions[4,5,6]
Read
Function
GW
BWE
BW3
BW2
BW1
BW0
1
1
X
X
X
X
Read
1
0
1
1
1
1
Write Byte 0-DQ[7:0]
Write Byte 1-DQ[15:8]
Write Bytes 1, 0
1
0
1
1
1
0
1
0
1
1
0
1
1
0
1
1
0
0
Write Byte 2 - DQ[23:16]
Write Bytes 2, 0
1
0
1
0
1
1
1
0
1
0
1
0
Write Bytes 2, 1
1
0
1
0
0
1
Write Bytes 2, 1, 0
1
0
1
0
0
0
Write Byte 3 - DQ[31:24]
Write Bytes 3, 0
1
0
0
1
1
1
1
0
0
1
1
0
Write Bytes 3, 1
1
0
0
1
0
1
Write Bytes 3, 1, 0
1
0
0
1
0
0
Write Bytes 3, 2
1
0
0
0
1
1
Write Bytes 3, 2, 0
1
0
0
0
1
0
Write Bytes 3, 2, 1
1
0
0
0
0
1
Write All Bytes
1
0
0
0
0
0
Write All Bytes
0
X
X
X
X
X
Notes:
4. X=Don't Care, 1=Logic HIGH, 0=Logic LOW.
5. The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW3-0. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri– state. OE
is a don't care for the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ=HIGH–Z when OE is inactive
or when the device is de–selected, and DQ=data when OE is active
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[7] .....................................−0.5V to VDDQ + 0.5V
DC Input Voltage[7]..................................−0.5V to VDDQ + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Com’l
Ambient
Temperature[8]
0°C to +70°C
VDD
3.3V −5% +10%
7
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