CY7C1339B-166 Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1339B-166 Datasheet PDF : 17 Pages
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CY7C1339B
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[7] ....................................... −0.5V to VDD + 0.5V
DC Input Voltage[7].................................... −0.5V to VDD + 0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature[8]
0°C to +70°C
–40°C to +85°C
VDD
VDDQ
3.3V
2.5V −5%
−5%/+10% 3.3V /+10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
VDD
VDDQ
VOH
VOL
VIH
VIL
IX
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[7]
Input Load Current
except ZZ and MODE
3.3V −5%/+10%
2.5V −5% to 3.3V +10%
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
VDDQ = 2.5V, VDD = Min., IOH = –2.0 mA
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
VDDQ = 2.5V, VDD = Min., IOL = 2.0 mA
VDDQ = 3.3V
VDDQ = 2.5V
VDDQ = 3.3V
VDDQ = 2.5V
GND ≤ VI ≤ VDDQ
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
−5
Input Current of MODE Input = VSS
−30
Input = VDDQ
Input Current of ZZ
Input = VSS
−5
Input = VDDQ
IOZ
Output Leakage
GND ≤ VI ≤ VDDQ, Output Disabled
−5
Current
IDD
VDD Operating Supply VDD = Max., IOUT = 0 mA,
6-ns cycle, 166 MHz
Current
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
ISB1
Automatic CS
Max. VDD, Device Deselected, 6-ns cycle, 166 MHz
Power-Down
Current—TTL Inputs
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
ISB2
Automatic CS
Max. VDD, Device Deselected, All speeds
Power-Down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
ISB3
Automatic CS
Max. VDD, Device Deselected, or 6-ns cycle, 166 MHz
Power-Down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
Current—CMOS Inputs f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
ISB4
Automatic CS
Max. VDD, Device Deselected,
Power-Down
VIN ≥ VIH or VIN ≤ VIL, f = 0
Current—TTL Inputs
Notes:
7. Minimum voltage equals −2.0V for pulse durations of less than 20 ns.
8. TA is the case temperature.
Max.
3.6
3.6
0.4
0.7
VDD + 0.3V
VDD + 0.3V
0.8
0.7
5
5
30
5
420
375
325
150
125
115
10
125
95
85
18
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Document #: 38-05141 Rev. *A
Page 8 of 17
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