CY7C1009-15VCT(1998) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1009-15VCT Datasheet PDF : 11 Pages
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CY7C109
CY7C1009
Switching Characteristics[3, 5] Over the Operating Range
Parameter
Description
READ CYCLE
tRC
tAA
tOHA
tACE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE1 LOW to Data Valid, CE2 HIGH to Data
Valid
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z[6, 7]
CE1 LOW to Low Z, CE2 HIGH to Low Z[7]
CE1 HIGH to High Z, CE2 LOW to High Z[6, 7]
CE1 LOW to Power-Up, CE2 HIGH to
Power-Up
tPD
CE1 HIGH to Power-Down, CE2 LOW to
Power-Down
WRITE CYCLE[8]
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tLZWE
tHZWE
Write Cycle Time
CE1 LOW to Write End, CE2 HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z[7]
WE LOW to High Z[6, 7]
7C109-20
7C1009-20
Min. Max.
20
20
3
20
8
0
8
3
8
0
20
20
15
15
0
0
12
10
0
3
8
7C109-25
7C1009-25
Min. Max.
25
25
5
25
10
0
10
5
10
0
25
25
20
20
0
0
15
15
0
5
10
7C109-35
7C1009-35
Min. Min.
35
35
5
35
15
0
15
5
15
0
35
35
25
25
0
0
20
20
0
5
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
Description
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data Retention Time
tR
Operation Recovery Time
Shaded areas contain preliminary information.
Conditions
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Min.
2.0
0
tRC
Max
50
Unit
V
µA
ns
ns
5
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