BSP324 Просмотр технического описания (PDF) - Siemens AG

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BSP324

SIPMOS® Small-Signal Transistor

Siemens AG 

BSP 324

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 0.17 A, VGS = 10 V

100

Ω

RDS (on) 80

70

60

50

40

98%

30

typ

20

10

0

-60

-20

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

4.6

V

4.0

VGS(th) 3.6

3.2

2.8

98%

2.4

typ

2.0

2%

1.6

1.2

0.8

0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

10 3

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 0

pF

C

10 2

A

I

F

10 -1

Ciss

10 1

Coss

Crss

10 0

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 -2

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

10 -3

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

Sep-12-1996

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