BSP324 Просмотр технического описания (PDF) - Siemens AG

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BSP324

SIPMOS® Small-Signal Transistor

Siemens AG 

BSP 324

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Therminal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

RthJS

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 72

K/W

≤ 12

E

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

400

-

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

1.5

2

Zero gate voltage drain current

IDSS

VDS = 400 V, VGS = 0 V, Tj = 25 °C

-

10

VDS = 400 V, VGS = 0 V, Tj = 125 °C

-

8

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

10

Drain-Source on-state resistance

RDS(on)

VGS = 10 V, ID = 0.17 A

-

20

-

2.5

100

50

100

25

Unit

V

nA

µA

nA

Ω

Semiconductor Group

2

Sep-12-1996

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