BSP324 Просмотр технического описания (PDF) - Siemens AG

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BSP324

SIPMOS® Small-Signal Transistor

Siemens AG 

BSP 324

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TA = 25 °C

-

Inverse diode direct current,pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 0.34 A, Tj = 25 °C

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

A

-

0.17

-

0.68

V

0.85

1.3

ns

300

-

µC

0.82 -

Semiconductor Group

4

Sep-12-1996

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