HN58S256AT-20 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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HN58S256AT-20 Datasheet PDF : 17 Pages
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HN58S256A Series
Capacitance (Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*1
Cin
—
—
6
Output capacitance*1
Cout
—
—
12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
AC Characteristics (Ta = 0 to +70 °C, VCC = 2.2 to 3.6 V)
Test Conditions
• Input pulse levels: 0.4 V to 1.9 V (VCC ≤ 2.7V), 0.4V to 2.4 V (VCC > 2.7 V)
• Input rise and fall time: ≤ 5 ns
• Input timing reference levels: 0.8, 1.8 V
• Output load: 1TTL Gate +100 pF
• Output reference levels: 1.1 V, 1.1 V (VCC ≤ 2.7V),1.5 V, 1.5 V (VCC > 2.7 V)
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*1
HN58S256A
-15
-20
Symbol Min Max Min
t ACC
— 150 —
t CE
— 150 —
t OE
10 80 10
t OH
0
—0
t DF
0
100 0
Max
200
200
100
—
100
Unit
ns
ns
ns
ns
ns
Test conditions
CE = OE = VIL, WE = VIH
OE = VIL, WE = VIH
CE = VIL, WE = VIH
CE = OE = VIL, WE = VIH
CE = VIL, WE = VIH
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